
Document Number: 001-52469 Rev. *H Page 15 of 50
DC Electrical Characteristics
DC Chip-Level Specifications
Tab le 9 lists the guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75 V to 5.25 V and
–40 °C T
A
85 °C, 3.0 V to 3.6 V and –40 °C T
A
85 °C, respectively. Typical parameters apply to 5 V and 3.3 V at 25 °C and
are for design guidance only.
Table 9. DC Chip-Level Specifications
Symbol Description Min Typ Max Units Notes
V
DD
Supply voltage 3.0 – 5.25 V See DC POR and LVD specifications,
Table 19 on page 25.
I
DD
Supply current – 5 8 mA Conditions are V
DD
= 5.0 V,
CPU = 3 MHz, 48 MHz disabled,
VC1 = 1.5 MHz, VC2 = 93.75 kHz,
VC3 = 93.75 kHz, analog power = off.
IMO = 24 MHz.
I
DD3
Supply current – 3.3 6.0 mA Conditions are V
DD
= 3.3 V,
CPU = 3 MHz, 48 MHz disabled,
VC1 = 1.5 MHz, VC2 = 93.75 kHz,
VC3 = 93.75 kHz, Analog power = off.
IMO = 24 MHz.
I
SB
Sleep (mode) current with POR, LVD, sleep
timer, and WDT.
[7]
– 3 6.5 A V
DD
= 3.3 V, –40 °C T
A
55 °C,
Analog power = off.
I
SBH
Sleep (mode) current with POR, LVD, sleep
timer, and WDT at high temperature.
[7]
– 4 25 A V
DD
= 3.3 V, 55 °C < T
A
85 °C,
Analog power = off.
I
SBXTL
Sleep (mode) current with POR, LVD, sleep
timer, WDT, and external crystal.
[7]
– 4 7.5 A Conditions are with properly loaded,
1 W max, 32.768 kHz crystal.
V
DD
= 3.3 V, –40 °C T
A
55 °C,
Analog power = off.
I
SBXTLH
Sleep (mode) current with POR, LVD, sleep
timer, WDT, and external crystal at high
temperature.
[7]
– 5 26 A Conditions are with properly loaded,
1 W max, 32.768 kHz crystal.
V
DD
= 3.3 V, 55 °C < T
A
85 °C,
Analog power = off.
V
REF
Reference voltage (bandgap) 1.28 1.30 1.32 V Trimmed for appropriate V
DD
.
Note
7. Standby current includes all functions (POR, LVD, WDT, sleep timer) needed for reliable system operation. This must be compared with devices that have similar
functions enabled.
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