Cypress Semiconductor MoBL CY62157EV30 Uživatelský manuál stáhnout pdf (Strana 6)

CY62157EV30 MoBL

Document #: 38-05445 Rev. *H Page 6 of 17

Data Retention Characteristics

Over the Operating Range

Parameter Description Conditions Min Typ

[10]

Max Unit

for data retention 1.5 V

CCDR

Data retention current

= 1.5V, CE

> V

– 0.2V,

0.2V

> V

– 0.2V or V

< 0.2V

Industrial/

Auto-A

25A

Auto-E 30

CDR

[11]

Chip deselect to data

retention time

0ns

[12]

Operation recovery time t

Data Retention Waveform

Figure 5. Data Retention Waveform

[13]

CC(min)

CDR

1.5V

DATA RETENTION MODE

CC(min)

BHE.BLE

Notes

10. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V

= V

CC(typ)

, T

= 25 °C.

11. Tested initially and after any design or process changes that may affect these parameters.

12. Full device operation requires linear V

ramp from V

to V

CC(min)

> 100 s or stable at V

CC(min)

> 100 s.

13. BHE

.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.

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